sot? 23 medium power transistor npn silicon feature ?epitaxial planar type ?complementary to 2sa1036k ? device marking and ordering information device marking shipping 2sc2411kqlt1 cq 3000/tape&reel 2sc2411krlt1 cr 3000/tape&reel maximum ratings (t a = 25 c) parameter symbol limits unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 32 v emitter-base voltage v ebo 5v collector current i c 0.5 a* collector power dissipation p c 0.2 w junction temperature t j 150 c storage temperature t stg -55~+150 c collector-base breakdown voltage bv cbo 40 -- vi c =100 a collector-emitter breakdown voltage bv ceo 32 -- vi c =1ma emitter-base breakdown voltgae bv ebo 5 -- vi e =100 a collector cutoff current i cbo -- 1 av cb =20v emitter cutoff current i ebo -- 1 av eb =4v dc current transfer ratio h fe 2 - 390 - v ce =3v collcetor-emitter saturation voltage v ce(sat) -- 0.4 v i c /i b =500ma/50ma transition frequency f t - 250 - mhz v ce =5v,i e =-20ma,f=100mhz output capacitance c ob - 6.0 - pf v cb =10v,i e =0a,f=1mhz *p c must not be exceeded. electrical characteristics( t a = 25 c ) parameter symbol min. ty p max. unit conditions 2 emitter 3 collector 1 base we declare that the material of product compliance with rohs requirements. ,i c =100ma h fe values are classified as follows: item q r h fe 120~270 180~390 2012- willas electronic corp. 2SC2411KXLT1
electrical characteristic curves(t a = 25 c) 0.8 0.2 0.4 0.9 0.7 0.5 1.1 0.3 1.0 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 ta=100 o c 25 o c 80 o c 25 o c 55 o c v ce =6v collector current : i c (ma) base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 1 0 2 3 4 5 0 100 50 0.50ma 0.45ma 0.40ma 0.35ma 0.30m a 0.25ma 0.20ma 0.15ma 0.10ma 0.05ma i b = 0a ta = 25 o c collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics( i) collector current : i c (ma) collector to emitter voltage : v ce (v) 1 0 2345 0 500 400 300 200 100 2ma 1.8ma 1.6ma 1.4ma 1.2ma 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma i b =0a ta = 25 o c fig.3 grounded emitter output characteristics( ii) collector to emitter voltage : v ce (v) 0.5 1 2 5 1 0 2 0 5 0 100 1000 200 500 0.2 0.5 1 0.02 0.05 0.1 =25 o c ta l c /l b =10 collector saturation voltage : v ce(sat) (v) fig.4 collector-emitter saturation voltage vs. collector current 2012- willas electronic corp. medium power transistor 2SC2411KXLT1
electrical characteristic curves(t a = 25 c) 500 1000 0.1 200 10 0.2 50 100 0.5 20 12 5 20 10 50 100 200 500 1000 dc current gain : h fe collector current : i c (ma) ta = 100 o c 75 o c 50 o c 25 o c 0 o c 25 o c 50 o c v ce = 3v fig.5 dc current gain vs. collector current fig.6 gain bandwidth product vs. emitter current emitter current : i e (ma) transition frequency : f t (mhz) ta = 25 o c v ce = 5v 0.5 1 2 5 10 20 50 50 100 200 500 0.5 1 2 5 1 0 2 0 5 0 5 2 10 20 50 cib cob ta = 25 o c f = 1mhz i e = 0a i c = 0a collector to base voltage : v ce (v) emitter to base voltage: v eb (v) collector output capacitance : cob(pf) emitter input capacitance : cib(pf) fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage 2012- willas electronic corp. medium power transistor 2SC2411KXLT1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. medium power transistor 2SC2411KXLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
|
